? semiconductor components industries, llc, 2012 june, 2012 ? rev. 11 1 publication order number: mmbt5401lt1/d mmbt5401lt1g, SMMBT5401LT1G, mmbt5401lt3g high voltage transistor pnp silicon features ? aec ? q101 qualified and ppap capable ? s prefix for automotive and other applications requiring unique site and control change requirements ? these devices are pb ? free, halogen free/bfr free and are rohs compliant maximum ratings rating symbol value unit collector ? emitter voltage v ceo ? 150 vdc collector ? base voltage v cbo ? 160 vdc emitter ? base voltage v ebo ? 5.0 vdc collector current ? continuous i c ? 500 madc stresses exceeding maximum ratings may damage the device. maximum ratings are stress ratings only. functional operation above the recommended operating conditions is not implied. extended exposure to stresses above the recommended operating conditions may affect device reliability. thermal characteristics characteristic symbol max unit total device dissipation fr ? 5 board (note 1) t a = 25 c derate above 25 c p d 225 1.8 mw mw/ c thermal resistance, junction ? to ? ambient r ja 556 c/w total device dissipation alumina substrate (note 2) t a = 25 c derate above 25 c p d 300 2.4 mw mw/ c thermal resistance, junction ? to ? ambient r ja 417 c/w junction and storage temperature t j , t stg ? 55 to +150 c 1. fr ? 5 = 1.0 0.75 0.062 in. 2. alumina = 0.4 0.3 0.024 in 99.5% alumina. device package shipping ? ordering information sot ? 23 (to ? 236) case 318 style 6 marking diagram mmbt5401lt3g sot ? 23 (pb ? free) 10,000 tape & reel ?for information on tape and reel specifications, including part orientation and tape sizes, please refer to our tape and reel packaging specification s brochure, brd8011/d. mmbt5401lt1g sot ? 23 (pb ? free) 3,000 tape & reel http://onsemi.com collector 3 1 base 2 emitter *date code orientation and/or overbar may vary depending upon manufacturing location. 1 2l m 2l = specific device code m = date code* = pb ? free package (note: microdot may be in either location) SMMBT5401LT1G sot ? 23 (pb ? free) 3,000 tape & reel
mmbt5401lt1g, SMMBT5401LT1G, mmbt5401lt3g http://onsemi.com 2 electrical characteristics (t a = 25 c unless otherwise noted) characteristic symbol min max unit off characteristics collector ? emitter breakdown voltage (i c = ? 1.0 madc, i b = 0) v (br)ceo ? 150 ? vdc collector ? base breakdown voltage (i c = ? 100 adc, i e = 0) v (br)cbo ? 160 ? vdc emitter ? base breakdown voltage (i e = ? 10 adc, i c = 0) v (br)ebo ? 5.0 ? vdc collector ? base cutoff current (v cb = ? 120 vdc, i e = 0) (v cb = ? 120 vdc, i e = 0, t a = 100 c) i cbo ? ? ? 50 ? 50 nadc adc on characteristics dc current gain (i c = ? 1.0 madc, v ce = ? 5.0 vdc) (i c = ? 10 madc, v ce = ? 5.0 vdc) (i c = ? 50 madc, v ce = ? 5.0 vdc) h fe 50 60 50 ? 240 ? ? collector ? emitter saturation voltage (i c = ? 10 madc, i b = ? 1.0 madc) (i c = ? 50 madc, i b = ? 5.0 madc) v ce(sat) ? ? ? 0.2 ? 0.5 vdc base ? emitter saturation voltage (i c = ? 10 madc, i b = ? 1.0 madc) (i c = ? 50 madc, i b = ? 5.0 madc) v be(sat) ? ? ? 1.0 ? 1.0 vdc small ? signal characteristics current ? gain ? bandwidth product (i c = ? 10 madc, v ce = ? 10 vdc, f = 100 mhz) f t 100 300 mhz output capacitance (v cb = ? 10 vdc, i e = 0, f = 1.0 mhz) c obo ? 6.0 pf small signal current gain (i c = ? 1.0 madc, v ce = ? 10 vdc, f = 1.0 khz) h fe 40 200 ? noise figure (i c = ? 200 adc, v ce = ? 5.0 vdc, r s = 10 , f = 1.0 khz) nf ? 8.0 db
mmbt5401lt1g, SMMBT5401LT1G, mmbt5401lt3g http://onsemi.com 3 figure 1. dc current gain i c , collector current (ma) 30 100 150 200 0.1 h , current gain 0.5 2.0 3.0 10 0.2 0.3 20 1.0 5.0 fe t j = 125 c 25 c -55 c 70 50 20 30 50 100 v ce = - 1.0 v v ce = - 5.0 v figure 2. collector saturation region i b , base current (ma) 1.0 0.1 0.5 2.0 10 0.2 1.0 5.0 20 50 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0 0.005 0.01 0.02 0.05 figure 3. collector cut ? off region v be , base-emitter voltage (volts) v ce , collector-emitter voltage (volts) , collector current (a) i c 10 3 0.1 0.3 0.2 10 2 10 1 10 0 10 -1 10 -2 10 -3 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 i c = 1.0 ma 10 ma 30 ma 100 ma v ce = 30 v i c = i ces t j = 125 c 75 c 25 c reverse forward
mmbt5401lt1g, SMMBT5401LT1G, mmbt5401lt3g http://onsemi.com 4 figure 4. collector emitter saturation voltage vs. collector current figure 5. base emitter saturation voltage vs. collector current i c , collector current (a) i c , collector current (a) 0.1 0.01 0.001 0.0001 0 0.03 0.05 0.08 0.10 0.15 0.18 0.20 0.1 0.01 0.001 0.0001 0.2 0.3 0.4 0.5 0.7 0.8 0.9 1.0 figure 6. base emitter voltage vs. collector current i c , collector current (a) 0.1 0.01 0.001 0.0001 0.2 0.3 0.5 0.6 0.7 0.8 1.0 1.1 v ce(sat) , collector ? emitter saturation voltage (v) v be(sat) , base ? emitter saturation voltage (v) v be(on) , base ? emitter voltage (v) 0.13 i c /i b = 10 150 c ? 55 c 25 c 0.6 i c /i b = 10 150 c ? 55 c 25 c 0.4 0.9 v ce = 10 v 150 c ? 55 c 25 c figure 7. temperature coefficients i c , collector current (ma) 2.5 c, capacitance (pf) 100 t j = 25 c c ibo figure 8. switching time test circuit v r , reverse voltage (volts) v , temperature coefficient (mv/ c) figure 9. capacitances 10.2 v v in 10 s input pulse v bb +8.8 v 100 r b 5.1 k 0.25 f v in 100 1n914 v out r c v cc -30 v 3.0 k t r , t f 10 ns duty cycle = 1.0% values shown are for i c @ 10 ma 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100 0.3 3.0 30 2.0 1.5 1.0 0.5 0 -0.5 -1.0 -1.5 -2.0 -2.5 t j = - 55 c to 135 c vc for v ce(sat) vb for v be(sat) c obo 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 0.2 0.5 1.0 2.0 5.0 10 20 0.3 3.0 0.7 7.0
mmbt5401lt1g, SMMBT5401LT1G, mmbt5401lt3g http://onsemi.com 5 t, time (ns) 1000 100 200 300 500 700 10 20 30 50 70 0.2 0.5 1.0 2.0 5.0 10 20 0.3 3.0 30 50 100 200 i c , collector current (ma) figure 10. turn ? on time i c /i b = 10 t j = 25 c t d @ v be(off) = 1.0 v v cc = 120 v t r @ v cc = 30 v t r @ v cc = 120 v t, time (ns) 2000 100 200 300 500 700 20 30 50 70 0.2 0.5 1.0 2.0 5.0 10 20 0.3 3.0 30 50 100 200 i c , collector current (ma) figure 11. turn ? off time 1000 t f @ v cc = 120 v t f @ v cc = 30 v t s @ v cc = 120 v i c /i b = 10 t j = 25 c figure 12. current gain bandwidth product figure 13. safe operating area i c , collector current (a) v ce , collector emitter voltage (v) 100 10 1 0.1 10 100 1000 1000 100 10 1 0.001 0.01 0.1 1 f t , current ? gain ? bandwidth product (mhz) i c , collector current (a) v ce = 1 v t a = 25 c 1 sec 10 msec
mmbt5401lt1g, SMMBT5401LT1G, mmbt5401lt3g http://onsemi.com 6 package dimensions sot ? 23 (to ? 236) case 318 ? 08 issue ap d a1 3 12 notes: 1. dimensioning and tolerancing per ansi y14.5m, 1982. 2. controlling dimension: inch. 3. maximum lead thickness includes lead finish thickness. minimum lead thickness is the minimum thickness of base material. 4. dimensions d and e do not include mold flash, protrusions, or gate burrs. mm inches scale 10:1 0.8 0.031 0.9 0.035 0.95 0.037 0.95 0.037 2.0 0.079 soldering footprint view c l 0.25 l1 e e e b a see view c dim a min nom max min millimeters 0.89 1.00 1.11 0.035 inches a1 0.01 0.06 0.10 0.001 b 0.37 0.44 0.50 0.015 c 0.09 0.13 0.18 0.003 d 2.80 2.90 3.04 0.110 e 1.20 1.30 1.40 0.047 e 1.78 1.90 2.04 0.070 l 0.10 0.20 0.30 0.004 0.040 0.044 0.002 0.004 0.018 0.020 0.005 0.007 0.114 0.120 0.051 0.055 0.075 0.081 0.008 0.012 nom max l1 h 2.10 2.40 2.64 0.083 0.094 0.104 h e 0.35 0.54 0.69 0.014 0.021 0.029 c 0 ??? 10 0 ??? 10 style 6: pin 1. base 2. emitter 3. collector on semiconductor and are registered trademarks of semiconductor components industries, llc (scillc). scillc reserves the right to mak e changes without further notice to any products herein. scillc makes no warranty, representation or guarantee regarding the suitability of its products for an y particular purpose, nor does scillc assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including wi thout limitation special, consequential or incidental damages. ?typical? parameters which may be provided in scillc data sheets and/or specifications can and do vary in different application s and actual performance may vary over time. all operating parameters, including ?typicals? must be validated for each customer application by customer?s technical experts. scillc does not convey any license under its patent rights nor the rights of others. scillc products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the scillc product could create a sit uation where personal injury or death may occur. should buyer purchase or use scillc products for any such unintended or unauthorized application, buyer shall indemnify and hold scillc and its of ficers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, direct ly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that scillc was negligent regarding the design or manufacture of the part. scillc is an equal opportunity/affirmative action employer. this literature is subject to all applicable copyright laws and is not for resale in any manner. publication ordering information n. american technical support : 800 ? 282 ? 9855 toll free usa/canada europe, middle east and africa technical support: phone: 421 33 790 2910 japan customer focus center phone: 81 ? 3 ? 5817 ? 1050 mmbt5401lt1/d literature fulfillment : literature distribution center for on semiconductor p.o. box 5163, denver, colorado 80217 usa phone : 303 ? 675 ? 2175 or 800 ? 344 ? 3860 toll free usa/canada fax : 303 ? 675 ? 2176 or 800 ? 344 ? 3867 toll free usa/canada email : orderlit@onsemi.com on semiconductor website : www.onsemi.com order literature : http://www.onsemi.com/orderlit for additional information, please contact your loca l sales representative
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